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Semiconductors in
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Semiconductor-based devices make our modern information technology society possible, and are playing a fast-increasing role in energy and lighting. This six lecture series provides a brief introduction to the principle materials properties that make semiconductors useful for electrical and optical devices. This introduction includes some modern devices, nanometer scale field effect transistors (MOSFETS), and diode lasers for communication networks. |
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Instructor Mark Miller (mark.miller@utah.edu) Office: 314 EMRO. Phone: 587-7718 Office hours: WH 1:30 – 2:30 |
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Texts The several supplementary texts given below cover a number of areas in semiconductor materials, physics, and devices. These texts may be of interest for students who want to look more deeply into a given area.
Lectures MWF, 2:00 - 2:50, EMRL 241 |
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lecture and links |
topics and activities |
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| 1. | Introduction and overview. Materials, properties, devices. |
| 2. | Heterostructures and bandgap engineering. |
| 3. | Heterostructures. Semiconductor nanostructures. |
| 4. | Semiconductor crystal growth. Epitaxy. Organic semiconductors. |
| 5. | Scaled MOSFETS for integrated circuits. |
| 6. | Optoelectronic devices: Diode lasers. |
Homework
The semiconductor final exam problem (pdf, 26 kB), asks for the design of a semiconductor heterostructure that has a particular internal quasi-electric field. A paper that may be useful, discussed in Lecture 3, is Empirical fit to band discontiuities and barrier heights in III-V alloy systems (pdf, 404 kB). |